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leakage current 【電學】漏泄電流。

leakage test

Under both stress conditions , stress induced leakage current follows a power law against stress time with different power factors . for hh silc , the exponential factor significantly deviates from - 1 在這兩種應力條件下,應力導致的漏電流( silc )與時間的關系均服從冪函數關系,但是二者的冪指數不同。

The flashover of iced insulators is also caused by the leakage current . the variety and development of the leakage current is one of the main factors to cause the iced insulators flashover 覆冰絕緣子的閃絡也是由泄漏電流引起的,泄漏電流的變化與發展是導致其是否能發展成完全閃絡的主要因素之一。

The relationships between leakage current , environment humidity , environment temperature and level of pollution are studied , then , the problem of fixed value alarming model is analyzed 認真研究了污穢泄漏電流與環境溫度、濕度和污穢程度之間的關系,指出了以往采用恒值報警模型存在的問題。

These methods are analyzed and disadvantages of them are pointed out . the nature and character of leakage current are analyzed . a high precised and broad bandwidth sensor is developed 本文分析了泄漏電流的產生機理和特點,并在此基礎上研制了一種精度高、頻帶寬的泄漏電流傳感器。

Rapid thermal treatment was found to greatly reduce leakage current down to 2 orders . and a combinatorial approach was applied to study the dielectric property change with varied bi implantation dose 以快速退火代替管式爐退火大幅度改善了其漏電性能,降低漏電流2個數量級以上。

The arising mechanism and character of leakage current are analyzed . based on these analyses , a high precise and wide bandwidth sensor is developed 分析了泄漏電流的產生機理和特點以及利用泄漏電流進行監測和報警的可能性,并在此基礎上研制了一種精度高、頻帶寬的泄漏電流傳感器。

Secondly , the transient characteristics of fn tunneling and hot hole ( hh ) stress induced leakage current ( silc ) in ultra - thin gate oxide are investigated respectively in this dissertation 其次,本文分別研究了fn隧穿應力和熱空穴( hh )應力導致的超薄柵氧化層漏電流瞬態特性。

Establishing and analyzing the mathematical model of moa , then developing a portable instrument based on the digital waveform analysis method for on - line monitoring leakage current of moa 分析并建立了moa的數學模型,并研制出一套基于dft數字波形分析法的便攜式moa在線監測裝置

Recently , there is a growing interest in the application of bst thin films , due to its high dielectric constant , low leakage current , and good pyroelectric properties 對于在器件方面的應用, bst薄膜的漏電流是最重要的電性能參數之一,因此對bst薄膜漏電特性的研究尤為重要。

The key idea is to model the leakage current reduction problem as a mixed - integer linear programming ( mlp ) problem in order to simultaneously place and size the sleep transistors optimally 該方法的核心是利用混合整數線性規劃方法同時確定插入細粒度休眠晶體管的位置和尺寸。

We analyzed the mechanism of the reverse leakage current for ni - salicide shallow junction and studied the effect of the different process condition on the reverse leakage current 分析了ni - salicide淺結反向漏電流產生的機理,研究了不同的工藝條件對淺結反向漏電流的影響。

It is found that after stressed by surges the varistors show a decrease in both break - down voltage and nonlinear exponent , and an increase in leakage current 實驗結果顯示,氧化鋅變阻器受突波侵襲后,會生成崩潰電壓降低,非歐姆指數值減小,以及漏電流增加等劣化現象。

Based on the characteristics of the dc traction power system in rail transit , a numerical model is set up to calculate the leakage current and the potential variation distribution 摘要針對城市軌道交通直流供電系統特點建立了雜散電流的計算模型并進行了仿真。

Most other types of capacitor have leakage resistances in excess of hundreds of gigohms so that for most applications their leakage currents can be disregarded 其他種類的電容漏電流很小,漏電電阻均超過數百吉歐,對于絕大多數用途而言,其漏電流可以忽略不計。

Microadding a appropriate amount of rare - earths oxide can decrease leakage current by means of raising the height of barrier potential and increasing grain resistivity of zinc oxide 添加微量稀土氧化物通過增大勢壘高度和氧化鋅晶粒電阻率來減小泄漏電流。

A fine - grain sleep transistor insertion technique based on our simplified leakage current and delay models is proposed to reduce leakage current 摘要首先給出一種泄漏電流和延時的簡化模型,并且在此基礎上提出了一種降低泄漏電流的細粒度休眠晶體管插入法。

And it would last a long time because of the flashover development , it ' s difficult to data acquisition or logging the leakage current waveform by currently instruments 并且泄漏電流的持續時間長,試驗中利用現有儀器觀測和記錄整個閃絡過程難以實現。

An hfo2 layer with less than 3 . 5nm eot was obtained and show good electrical properties . the gate leakage current at a gate voltage bias of iv is less than 10 - 7 a / cm2 研究顯示,濺射氛圍中增加氧分壓和在氧氣氛退火有助于減小hfo _ 2柵介質的漏電流。

Furthermore , it shows that the fractional increament of reverse leakage current , due to its large variation , is a preferable parameter to represent the degree of degradation 再者,因為反向漏電流的增加率變化較大,所以是表達劣化過程比較適合的參數。